Compact MOSFET models for VLSI design / A. B. Bhattacharyya.
Imprint
Singapore ; Hoboken, NJ : John Wiley & Sons (Asia) ; [Piscataway, NJ] : IEEE Press, 2009
Copies
Location
Call No.
Status
Female Library
TK7874.75 B52 2009
Available
Description
xxiv, 432 p. : ill. ; 26 cm.
Bibliography
Includes bibliographical references and index.
Contents
Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor -- Non-ideal and non-classical MOS capacitors -- Long channel MOS transistor -- The scaled MOS transistor -- Quasistatic, non-quasistatic, and noise models -- Quantum phenomena in MOS transistors -- Non-classical MOSFET structures -- Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate -- Appendix B : features of select compact MOSFET models -- Appendix C : PSP two-point collocation method.
