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LEADER 00000nam a2200253 a 4500
001 u29466
001 30186
003 SIRSI
005 20100714101700.0
008 140710s2009 si a00000b0000001100eng0d
020 9780470823422 (cloth)
020 0470823429 (cloth)
049 JURF
050 00 TK7874.75|bB52 2009
100 1 Bhattacharyya, A. B.|q(Amalendu Bhushan)
245 10 Compact MOSFET models for VLSI design /|cA. B.
Bhattacharyya.
260 Singapore ;|aHoboken, NJ :|bJohn Wiley & Sons (Asia) ;
|a[Piscataway, NJ] :|bIEEE Press,|c2009
300 xxiv, 432 p. :|bill. ;|c26 cm.
504 Includes bibliographical references and index.
505 0 Semiconductor physics review for MOSFET modeling -- Ideal
metal oxide semiconductor capacitor -- Non-ideal and non-
classical MOS capacitors -- Long channel MOS transistor --
The scaled MOS transistor -- Quasistatic, non-quasistatic,
and noise models -- Quantum phenomena in MOS transistors -
- Non-classical MOSFET structures -- Appendix A :
expression for electric field and potential variation in
the semiconductor space charge under the gate -- Appendix
B : features of select compact MOSFET models -- Appendix C
: PSP two-point collocation method.
650 0 Integrated circuits|xVery large scale integration|xDesign
and construction
650 0 Metal oxide semiconductor field-effect transistors|xDesign
and construction